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Negative drain pulse stress induced two-stage degradation of P-channel poly-Si thin-film transistors

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4 Author(s)
Xiaowei Lu ; Dept. of Microelectron., Soochow Univ., Suzhou, China ; Mingxiang Wang ; Meng Zhang ; Man Wong

Negative drain pulse stress induced degradation in p-channel poly-Si thin-film transistors (TFTs) was systematically investigated. On-state current (ION) exhibits two-stage degradation behaviors. In the first-stage degradation, electron injection related equivalent DC effect is responsible for the degradation behavior. While in the second-stage, based on a previously proposed PN junction degradation model, degradation behavior can be well understood, which is controlled by dynamic hot carrier (HC) degradation mechanism.

Published in:

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Date of Conference:

4-7 July 2011