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Analysis of low-frequency noise in a-Si:H thin-film transistor by using a unified model

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4 Author(s)
Younghwan Son ; Inter-Univ. Semicond. Res. Center (ISRC), Seoul Nat. Univ., Seoul, South Korea ; Jaehong Lee ; Jaeho Lee ; Hyungcheol Shin

Low-frequency noise characteristics are investigated in top contact type a-Si:H TFT. For analysis of low-frequency noise data, the unified noise model is applied which combine the carrier number and mobility fluctuations. These two mechanisms are confirmed as a main element of noise in a-Si:H TFT by using current-voltage (I-V) measurement and noise analysis. From the measured low-frequency noise characteristics, the effective trap density and scattering coefficient are extracted by using the unified noise model.

Published in:

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Date of Conference:

4-7 July 2011