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The effect of plasma pre-cleaning on the Cu-Cu direct bonding for 3D chip stacking.

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6 Author(s)
Jae-Won Kim ; Dept. of Nano-Mech., Korea Inst. of Machinery & Mater., Daejeon, South Korea ; Kwang-Seup Kim ; Hak-Joo Lee ; Hee-yeon Kim
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The effect of bonding temperature and plasma treatment on the interfacial adhesion energy of the Cu-Cu direct bonding layers was investigated under 4-point bending test method. Interfacial adhesion energies with increasing bonding temperature, Good-quality Cu to Cu bonding is achieved at the low bonding temperature of 250°C with surface treatment.

Published in:

Physical and Failure Analysis of Integrated Circuits (IPFA), 2011 18th IEEE International Symposium on the

Date of Conference:

4-7 July 2011