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An Analytical Drain Current Model for Short-Channel Triple-Material Double-Gate MOSFETs

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4 Author(s)
Harshit Agnihotri ; Dept. of Electron. Eng., Banaras Hindu Univ., Varanasi, India ; Abhishek Ranjan ; Pramod Kumar Tiwari ; S. Jit

In this paper, a strong inversion drain current model incorporating various effects such as channel length modulation has been developed for a short-channel symmetrical triple material - double gate (TM-DG) MOSFET based on the drift current equation. The model results have been compared with the simulation data obtained by using the commercially available device simulation software ATLAS™.

Published in:

2011 IEEE Computer Society Annual Symposium on VLSI

Date of Conference:

4-6 July 2011