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Modeling the reverse base current phenomenon due to avalanche effect in advanced bipolar transistors

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2 Author(s)
J. J. Liou ; Dept. of Electr. Eng., Univ. of Central Florida, Orlando, FL, USA ; J. S. Yuan

A model of reverse base current characteristics which is based on device physics is presented. The model requires only physical parameters, thus allowing circuit designers to estimate the device performance under avalanche operation prior to the actual device fabrication. Previously reported experimental data are included in support of the model

Published in:

IEEE Transactions on Electron Devices  (Volume:37 ,  Issue: 10 )