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Nanobeam photonic crystal cavity light-emitting diodes

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8 Author(s)
Shambat, G. ; Department of Electrical Engineering, Stanford University, Stanford, California 94305, USA ; Ellis, Bryan ; Petykiewicz, J. ; Mayer, M.A.
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Your organization might have access to this article on the publisher's site. To check, click on this link:http://dx.doi.org/+10.1063/1.3625432 

We present results on electrically driven nanobeam photonic crystal cavities formed out of a lateral p-i-n junction in gallium arsenide. Despite their small conducting dimensions, nanobeams have robust electrical properties with high current densities possible at low drive powers. Much like their two-dimensional counterparts, the nanobeam cavities exhibit bright electroluminescence at room temperature from embedded 1250 nm InAs quantum dots. A small room temperature differential gain is observed in the cavities with minor beam self-heating suggesting that lasing is possible. These results open the door for efficient electrical control of active nanobeam cavities for diverse nanophotonic applications.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 7 )

Date of Publication:

Aug 2011

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