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Electrical transport in carbon nanotube intermolecular p-n junctions

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4 Author(s)
Li, Hong ; Sch. of Electr. & Electron. Eng., Nanyang Technol. Univ., Singapore, Singapore ; Zhang, Q. ; Chin Chong Yap ; Tay, Beng Kang

Thermionic emission and tunneling are found to be the dominant transport mechanisms under the forward and reverse bias conditions, respectively, in a single-walled carbon nanotube based intermolecular p-n junction. At a reverse bias, the kink point on the plot of ln(I/V2) vs 1/V indicates that the transport mechanism experiences a transition from direct tunneling to the Fowler-Nordheim tunneling through the junction barrier. In contrast, the Arrhenius plot of the I-V curve at forward biases shows that tunneling dominates over the thermionic emission below 50 K.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011