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Amorphous silicon charge storage layer of nonvolatile memory with trigate nanowires structure

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7 Author(s)
Hung-Bin Chen ; Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Yung-Chun Wu ; Lun-Jyun Chen ; Ji-Hong Chiang
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This study demonstrates a trigate poly-Si nonvolatile memory (NVM) with an amorphous silicon (a-Si) charge trapping layer. The NWs SOAOS (silicon-oxide-amorphous silicon-oxide-silicon) NVM exhibits higher program/erase (P/E) efficiency than that of a conventional SONOS NVM. Moreover, SOAOS NVM shows greater endurance (>; 2.4 V after 104 cycles) and longer charge retention time (>; 109 s for 31% charge loss at 85°C). The result reveals that SOAOS-NVM has potential in system-on-panel and 3D stacked NVM applications.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

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