Amorphous silicon charge storage layer of nonvolatile memory with trigate nanowires structure

This study demonstrates a trigate poly-Si nonvolatile memory (NVM) with an amorphous silicon (a-Si) charge trapping layer. The NWs SOAOS (silicon-oxide-amorphous silicon-oxide-silicon) NVM exhibits higher program/erase (P/E) efficiency than that of a conventional SONOS NVM. Moreover, SOAOS NVM shows greater endurance (>; 2.4 V after 10
⁴
cycles) and longer charge retention time (>; 10
⁹
s for 31% charge loss at 85°C). The result reveals that SOAOS-NVM has potential in system-on-panel and 3D stacked NVM applications.