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This paper reports the effects of different light intensity of white color LEDs illuminated on P-TFT devices doped and un-doped with B2H6 inside the polycrystalline silicon channel with different channel width/length (W/L) by analyzing Id-Vg transfer curves. Results indicate that the threshold voltage (Vth), of the p-TFT device was shifted to positive values by increasing illumination intensity, and C-V curves will be in accordance with the Vth shift to positive voltage. Off Current (Ioff) and sub-threshold swing (S.S.) of p-TFT devices were increased with increasing illumination intensity. The reason why the doped p-TFT devices revealed much photo sensitivity is correlated with B2H6 dosage doping directly inside the grain boundaries of the p-channel creating the deep traps and inside the gate dielectric creating the electron traps, and causes larger Vth shift and worse device degradation from second ion magnet spectroscopy (SIMS) analysis.