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Photo sensitivity of p-type low-temperature polycrystalline silicon thin-film transistors by adjusting the channel doping dosage

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4 Author(s)
Yih-Shing Lee ; Dept. of Optoelectron. Syst. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan ; Ching-Chuan Liao ; Hong-Yi Luo ; Tsai, J.

This paper reports the effects of different light intensity of white color LEDs illuminated on P-TFT devices doped and un-doped with B2H6 inside the polycrystalline silicon channel with different channel width/length (W/L) by analyzing Id-Vg transfer curves. Results indicate that the threshold voltage (Vth), of the p-TFT device was shifted to positive values by increasing illumination intensity, and C-V curves will be in accordance with the Vth shift to positive voltage. Off Current (Ioff) and sub-threshold swing (S.S.) of p-TFT devices were increased with increasing illumination intensity. The reason why the doped p-TFT devices revealed much photo sensitivity is correlated with B2H6 dosage doping directly inside the grain boundaries of the p-channel creating the deep traps and inside the gate dielectric creating the electron traps, and causes larger Vth shift and worse device degradation from second ion magnet spectroscopy (SIMS) analysis.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

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