Cart (Loading....) | Create Account
Close category search window

Vertically-stacked bottom- and top- gate polycrystalline silicon TFTs for three dimensional integrated circuit

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Lee, I-Che ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Tsung-Che Tsai ; Chun-Chien Tsai ; Yang, Po-Yu
more authors

A high-performance poly-Si TFT with bottom-gate structure and a top-gate poly-Si TFT were vertically stacked for three dimensional integrated circuit. Consequently, the n-channel poly-Si TFTs with bottom-gate structure on the bottom layer showed considerably improved electrical characteristics, such as a high field effect mobility of 390 cm2/V-s due to the large lateral grain formed in the channel. The vertically stacked p-channel poly-Si TFTs with top-gate structure on the top layer showed a high field effect mobility of 131 cm2/V-s. Therefore, the proposed structure is very suitable for future 3D-IC and nano-device application.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.