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An analytical model for the lateral channel electric field in LDD structures

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3 Author(s)
Hu, Y. ; Sherman Fairchild Center, Lehigh Univ., Bethlehem, PA, USA ; Booth, R.V.H. ; White, M.H.

An analytical model for the lateral channel electric field in lightly doped drain (LDD) MOSFETs is developed from a pseudo-two-dimensional analysis. The model gives a prediction of the channel field when the lightly doped region is both fully depleted and partially depleted. The normal field mobility degradation and variation of the saturation field Esat with gate voltage have been taken into account in the model. The boundary conditions for determining the pinch-off point Lsat proposed in the model along with the normal field mobility degradation consideration make possible the prediction of the variation of the pinch-off with the gate bias and the maximum value of the electric field Emax . The differences between this model, existing models, and two-dimensional numerical simulations are discussed

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 10 )