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Photoresponse of Zinc oxide thin-film transistors with location-controlled crystal grains fabricated by low-temperature hydrothermal method

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11 Author(s)
Yang, Po-Yu ; Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Lee, I-Che ; Chia-Tsung Chang ; Chao-Lung Wang
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Zinc oxide (ZnO) bottom-gate (BG) thin-film transistors (TFTs) with single vertical grain boundary in the channel have been successfully fabricated by a novel low-temperature (i.e. 85 °C) hydrothermal method. The proposed devices demonstrated the high field-effect mobility of 9.07 cm2/V·s, low threshold voltage of 2.25 V, high on/off current ratio above 106, and superior current drivability, attributed to the high-quality ZnO channel with single grain boundary. Moreover, a stable and repeatable operation of dynamic photoresponse is observed for the location-controlled hydrothermally grown ZnO BG-TFTs.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

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