Cart (Loading....) | Create Account
Close category search window
 

Nano-scale Si-capping thicknesses impacting junction performance on <110> silicon substrate

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

6 Author(s)
Mu-Chun Wang ; Dept. of Electron. Eng., Minghsin Univ. of Sci. & Technol., Hsinchu, Taiwan ; Ren-Hau Yang ; Wen-Shiang Liao ; Hsin-Chia Yang
more authors

Silicon capping layer is a useful dielectric smoothing the interface integrity between gate dielectric and SiGe deposition layer in nano-scale process technology and reducing the possibility of Ge atom diffusion into the gate dielectric. However, the junction performance in reverse saturation current is suffered. Through the deliberate pattern design, the fringe junction leakage for MOSFET device was effectively extracted. The thicker Si capping layer well prevents Ge atom from diffusing into gate dielectric, but causes more fringe junction leakage at source/drain sites.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

Need Help?


IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.