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Tunable resistance switching characteristics in a thin FeOx- transition layer part II: Sweeping voltage controlling

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9 Author(s)
Chang, Yao-Feng ; Dept. of Electron. Eng. & Inst. of Electron., Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Feng, Li-Wei ; Chih-Wen Huang ; Guo-Yuan Wu
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Multilevel resistance switching characteristics of the thin FeOx-transition layer were studies by controlling the maximum stopped voltage during reset process. It is obtained that the HRS is mainly influenced by the stopped voltage value, which is nearly independent to the LRS. Moreover, statistics of set and reset electrical parameters show that the possible switching process is localized, and also, the multiple resistive switching states in the TiN/SiO2/FeOx/Fe memristor could be approved.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011

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