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Realization of InGaN solar cells with InGaN/GaN superlattice absorption layers by metalorganic vapor phase epitaxy (MOVPE)

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4 Author(s)
Tsai, Chia-Lung ; Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan ; Zhong-Fan Xu ; Yu-Sheng Lee ; Gong-Cheng Fan

In this study, we report on the realization of InGaN solar cells with InGaN/GaN superlattice (SL) absorption layers by low-pressure metalorganic vapor phase epitaxy (MOVPE). High-resolution X-ray diffraction and photoluminescence analyses show that solar cells with an SL have improved crystalline quality and can accommodate more indium content than those using an InGaN layer. Using SLs of a reasonable crystalline quality, these fabricated solar cells exhibit improved photovoltaic characteristics.

Published in:

Nanoelectronics Conference (INEC), 2011 IEEE 4th International

Date of Conference:

21-24 June 2011