By Topic

Base-emitter injection characterization in low-temperature pseudo-heterojunction bipolar transistors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yano, K. ; Hitachi Ltd., Tokyo, Japan ; Nakazato, K. ; Miyamoto, M. ; Aoki, M.
more authors

Carrier injection characteristics in a pseudo-heterojunction bipolar transistor (pseudo-HBT) are clarified both theoretically and experimentally. It is found that a low-concentration external-base structure completely rejects carrier injections and selectively injects electrons into the intrinsic base at low temperatures. This unique property inherent in low-temperature operation is verified in an experimental pseudo-HBT. Based on the results, the vertical and horizontal scaling rules for pseudo-HBTs are clarified. The analysis reveals that the low-temperature bipolar transistor has a very small emitter- and external-base charging time, which allows excellent vertical and horizontal scalability for superior to that of conventional room-temperature transistors

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 10 )