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Novel refractory contact and interconnect metallizations for high-voltage and smart-power applications

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1 Author(s)
Shenai, K. ; Gen. Electr. Corp. Res. & Dev. Center, Schenectady, NY, USA

Power electronic system performance enhancements, device structures, process technologies, manufacturability, and performance results obtained from three distinct process technologies that are based on selective TiSi2 and low-pressure chemical vapor deposition (LPCVD) tungsten, and blanket LPCVD WSi2 are discussed. Several key factors are identified that should be helpful in the choice and implementation of refractory metallization targeted for a specific system enhancement. It is demonstrated that the application of advanced wafer fabrication technologies using refractory multilevel metallizations has resulted in nearly optimal performance from low-voltage silicon power devices. Tables are shown which summarize the current state of the art of refractory metallization as applied to power system applications. It is seen that TiSi2-based technology has the highest potential for near-term commercialization, followed by LPCVD WSi2

Published in:

Electron Devices, IEEE Transactions on  (Volume:37 ,  Issue: 10 )

Date of Publication:

Oct 1990

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