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Evaluation of Mechanisms in TID Degradation and SEE Susceptibility of Single- and Multi-Level High Density NAND Flash Memories

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4 Author(s)
Irom, F. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA ; Nguyen, D.N. ; Harboe-Sorensen, R. ; Virtanen, A.

Heavy ion single-event measurements and total ionizing dose (TID) response for 8 Gb commercial NAND flash memories are reported. Radiation results of multi-level flash technology are compared with results from single-level flash technology. The single-level devices are less sensitive to single event upsets (SEUs) than multi-level devices. In general, these commercial high density memories exhibit less TID degradation compared to older generations of flash memories.

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Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 5 )