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Comparative Analysis of SEU in FinFET SRAM Cells for Superthreshold and Subthreshold Supply Voltage Operation

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3 Author(s)
Rathod, S.S. ; Dept. of Electron. & Comput. Eng., Indian Inst. of Technol. Roorkee, Roorkee, India ; Saxena, A.K. ; Dasgupta, S.

Subthreshold circuits are extensively used to reduce power consumption. However, increased susceptibility to radiation particles strikes can significantly impact the reliability of such systems. In this brief, we analyze different FinFET static-random-access-memory (SRAM) cells for single-event-upset immunity and compare their performance when operated with superthreshold and subthreshold supply voltage. Based on these observations, we propose several guidelines for radiation hardening of subthreshold FinFET SRAM designs. These guidelines suggest that the traditional radiation-hardening approaches need to be revisited for subthreshold designs.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 10 )