By Topic

Low-Voltage Multilevel Memory Based on Organic Thin-Film Transistor

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Liwei Shang ; Key Lab. of Nanofabrication & Novel Devices Integration Technol., Chinese Acad. of Sci., Beijing, China ; Zhuoyu Ji ; Hong Wang ; Yinping Chen
more authors

A low-voltage multilevel organic thin-film memory device is proposed and demonstrated for nonvolatile data storage. Charge carrier density in the storage field was tuned up to four discrete levels in pentacene organic thin-film transistor with poly(methyl methacrylate)-modified Al2O3 film as the dielectric layer through light-assisted program procedures. Charges can be stored over 1 × 104 s at room temperature. The states can be clearly distinguished after 1 × 104 write-read cycles.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )