By Topic

High-reliability GaAs HBT monolithic microwave amplifier

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

9 Author(s)
Yamada, F.M. ; Electron. & Technol. Div., TRW Inc., Redondo Beach, CA, USA ; Oki, A.K. ; Streit, D.C. ; Umemoto, D.K.
more authors

High-reliability performance of an X-band high-intercept MMIC amplifier fabricated using a production GaAs/AlGaAs HBT process technology is reported. Operating at 20 kA/cm/sup 2/ quiescent collector current density, the single-stage balanced amplifier with on-chip regulation has a projected median-time-to-failure (MTF) determined by three-temperature constant-stress accelerated lifetest using |/spl Delta/S21|>1.0 dB as the failure criterion. Additionally, an activation energy (Ea) of 1.2 eV and log-standard deviation (/spl sigma/) of 0.7 was measured. This is the first report of HBT reliability based on small-signal microwave characteristics of HBT MMIC amplifiers under lifetest.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 1997., IEEE

Date of Conference:

10-10 June 1997