Referenced Items are not available for this document.
A six-MOS-transistor/two-MTJ-device (6T-2MTJ)-based cell circuit with an autonomous leakage-current control mechanism is proposed and fabricated for a fully parallel nonvolatile TCAM. A diode-connected nMOS transistor is inserted into each cell for match-line discharge control, which enables bit-parallel equality-search operation more than 144 bits. Since each match line is divided into three segments, the activity rate of cells is reduced to 2.8%. This almost eliminates leakage power while maintaining comparable search energy of 1.04 fJ/bit/search in comparison with a CMOS-based TCAM.
Published in:
VLSI Circuits (VLSIC), 2011 Symposium on
Date of Conference: 15-17 June 2011
- Page(s):
- 298 - 299
- ISSN :
- 2158-5601
- Print ISBN:
- 978-1-61284-175-5
- INSPEC Accession Number:
- 12194486
- Conference Location :
- Honolulu, HI
- Product Type:
- Conference Publications
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