Referenced Items are not available for this document.
A simplified RC circuit is used to simulate the effects of ionizing particles in a 90nm SRAM. The main characteristic of the memory cell bit flip are discussed and compared for characteristic parameters. The effect of the surrounded circuit on the impacted transistor is discussed in order to extract parameters characteristic of the SEU occurrence.
Published in:
Test Workshop (LATW), 2011 12th Latin American
Date of Conference: 27-30 March 2011
- Page(s):
- 1 - 5
- Print ISBN:
- 978-1-4577-1489-4
- INSPEC Accession Number:
- 12206944
- Conference Location :
- Porto de Galinhas
- Digital Object Identifier :
- 10.1109/LATW.2011.5985895
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