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Ga droplet surface dynamics during Langmuir evaporation of GaAs

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5 Author(s)
W. -X. Tang ; School of Physics, Monash University, Victoria, Australia ; C. -X. Zheng ; Z. -Y. Zhou ; D. E. Jesson
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We describe the design and application of a low-energy electron microscope (LEEM) dedicated to the study of III–V materials. Recent studies of Langmuir (free) evaporation of GaAs(001) have been reviewed. Running Ga droplets are observed, and the motion is predicted and shown to slow and stop near a characteristic temperature. Striking bursts of “daughter” droplet nucleation accompany the coalescence of large “parent” droplets. These observations imply that evaporation and surface morphology are intimately connected, suggesting a new approach for the self-assembly and positioning of nanostructures on patterned surfaces.

Note: The Institute of Electrical and Electronics Engineers, Incorporated is distributing this Article with permission of the International Business Machines Corporation (IBM) who is the exclusive owner. The recipient of this Article may not assign, sublicense, lease, rent or otherwise transfer, reproduce, prepare derivative works, publicly display or perform, or distribute the Article.  

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IBM Journal of Research and Development  (Volume:55 ,  Issue: 4 )