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Study of Random Dopant Fluctuation Effects in Germanium-Source Tunnel FETs

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5 Author(s)
Damrongplasit, N. ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Changhwan Shin ; Sung Hwan Kim ; Vega, R.A.
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The effects of random dopant fluctuations (RDFs) on the performance of Germanium-source tunnel field-effect transistors (TFETs) is studied using 3-D device simulation. The RDF in the source region is found to have the most impact on threshold voltage variation (σVTH) if the source is moderately doped (1019 cm-3) such that vertical tunneling within the source is dominant. If the source is heavily doped (1020 cm-3) such that lateral tunneling from the source to the channel is dominant, the impact of RDF in the channel region is also significant. RDF-induced threshold voltage variation (σVTH) for an optimally designed Ge-source TFET is relatively modest (σVTH <; 20 mV at Lg = 30 nm), compared with a MOSFET of similar gate length. Supply voltage scaling is not beneficial for reducing TFET σVTH.

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Electron Devices, IEEE Transactions on  (Volume:58 ,  Issue: 10 )