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Finite-Zone Argon Implant Edge Termination for High-Voltage GaN Schottky Rectifiers

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2 Author(s)
Ozbek, A.M. ; Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA ; Baliga, B.J.

In this letter, the results obtained with a finite termination by argon ion implantation at the periphery of GaN Schottky barrier diodes are reported. It is demonstrated that the implant region width required to obtain the ideal plane parallel breakdown voltage of 1700 V is 50 μm.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )