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The Influence of In/Zn Ratio on the Performance and Negative-Bias Instability of Hf–In–Zn–O Thin-Film Transistors Under Illumination

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11 Author(s)
Hyun-Suk Kim ; Display Lab., Samsung Adv. Inst. of Technol., Yongin, South Korea ; Joon Seok Park ; Wan-Joo Maeng ; Kyoung Seok Son
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The performance and stability of hafnium-indium-zinc-oxide (HIZO) thin-film transistors (TFTs) are evaluated with respect to the relative content in In and Zn cations. While devices that incorporate an active layer with an In-rich composition exhibit higher field-effect mobility values, they undergo larger negative shifts in Vth upon negative-bias illumination stress (NBIS). Density-of-states analyses suggest that a higher In/Zn ratio in the semiconductor results in larger defect states in the vicinity of the semiconductor/gate-insulator interface. Accordingly, these defect states may act as carrier traps that accelerate the degradation of HIZO TFTs upon NBIS.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 9 )

Date of Publication:

Sept. 2011

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