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Stress-induced performance enhancement in Si ultra-thin body FD-SOI MOSFETs: Impacts of scaling

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9 Author(s)
Nuo Xu ; Dept. of Electr. Eng. & Comput. Sci., Univ. of California, Berkeley, CA, USA ; Andrieu, F. ; Jaeseok Jeon ; Xin Sun
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A detailed study of the impact of channel stress on (100)/<;110>; Ultra-Thin Body and BOX (UT2B) Fully Depleted SOI (FD-SOI) MOSFET performance is presented. Stress-induced mobility enhancement diminishes with Si body thickness scaling below 5nm for electrons but not for holes. Performance enhancement is maintained with gate-length scaling.

Published in:

VLSI Technology (VLSIT), 2011 Symposium on

Date of Conference:

14-16 June 2011