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Phase-change memory driven by poly-Si MOS transistor with low cost and high-programming gigabyte-per-second throughput

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13 Author(s)
Sasago, Y. ; Central Res. Lab., Hitachi Ltd., Tokyo, Japan ; Kinoshita, M. ; Minemura, H. ; Anzai, Y.
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A phase-change memory (PCM) driven by poly-Si MOS transistors was fabricated. The thin phase-change-material layer deposited directly on the channel silicon layer in the PCM enables low-current reset operation (45 μA) compared to the conventional memory structure. This memory-cell configuration enables both a poly-Si MOS-driven stackable memory array and large degree programming parallelization. A contactless simple cell structure makes it possible to reduce the cell size to 4F2 and the number of process steps. Low cost and gigabyte-per-second programming throughput are thus made possible by this stackable phase-change memory.

Published in:

VLSI Technology (VLSIT), 2011 Symposium on

Date of Conference:

14-16 June 2011