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Exact control of junction position and Schottky barrier height in dopant-segregated epitaxial NiSi2 for high performance metal source/drain MOSFETs

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4 Author(s)
Mizubayashi, W. ; MIRAI-NIRC, Nat. Inst. of Adv. Ind. Sci. & Technol. (AIST), Tsukuba, Japan ; Migita, S. ; Morita, Y. ; Ota, H.

This paper reports junction position control and the Schottky barrier height (ΦBn) tuning in ultrathin SOI MOSFETs with epitaxial NiSi2 source/drain (S/D). We demonstrate the junction position control in the lateral direction with preserving the (111) facet in 8-nm-thick SOI using epitaxial NiSi2 growth. ΦBn at epitaxial NiSi2 can be easily controlled by P+ implanted dose using dopant segregation technique, and the saturation drain current (IDSat.) increases due to lowering ΦBn. Thus, epitaxial NiSi2 is a promising metal S/D for future MOSFETs.

Published in:

VLSI Technology (VLSIT), 2011 Symposium on

Date of Conference:

14-16 June 2011

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