Skip to Main Content
This paper reports junction position control and the Schottky barrier height (ΦBn) tuning in ultrathin SOI MOSFETs with epitaxial NiSi2 source/drain (S/D). We demonstrate the junction position control in the lateral direction with preserving the (111) facet in 8-nm-thick SOI using epitaxial NiSi2 growth. ΦBn at epitaxial NiSi2 can be easily controlled by P+ implanted dose using dopant segregation technique, and the saturation drain current (IDSat.) increases due to lowering ΦBn. Thus, epitaxial NiSi2 is a promising metal S/D for future MOSFETs.