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Theoretical study of the resistance switching mechanism in rutile TiO2−x for ReRAM: The role of oxygen vacancies and hydrogen impurities

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3 Author(s)
Park, S.G. ; Dept. of Mater. Sci. & Eng., Stanford Univ., Stanford, CA, USA ; Magyari-Kope, B. ; Nishi, Y.

We study the resistance switching mechanism of rutile TiO2 using ab initio calculations based on DFT. Ordering of the oxygen vacancies substantially increases the conductivity of TiO2 by forming a conductive channel, i.e. “ON”-state. We find that the diffusion of either oxygen or hydrogen atoms into the conductive channel causes the rupture of the conductive filament resulting in the transition from “ON”-state to “OFF”-state.

Published in:

VLSI Technology (VLSIT), 2011 Symposium on

Date of Conference:

14-16 June 2011