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Harmonic and two-tone intermodulation distortion analyses of the inverted InGa/InAlAs/InP HBT

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2 Author(s)
Bin Li ; Dept. of Electr. & Comput. Eng., Northeastern Univ., Boston, MA, USA ; S. Prasad

Harmonic and two-tone intermodulation distortion analyses of the InGaAs/InAlAs/InP collector-up heterojunction bipolar transistor (HBT) are performed by a simple Ebers-Moll model. The parasitic elements of the equivalent circuit are extracted at zero bias by numerical optimization. A semianalytical approach is used to extract the intrinsic parameters of the small-signal equivalent circuit at nonzero bias points. Appropriate equations given by device physics are fitted to the bias variation of intrinsic parameters so that the Ebers-Moll model parameters can be extracted. Agreement between simulation and measurement of harmonic and intermodulation distortion is achieved

Published in:

IEEE Transactions on Microwave Theory and Techniques  (Volume:45 ,  Issue: 7 )