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Multitone power and intermodulation load-pull characterization of microwave transistors suitable for linear SSPA's design

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3 Author(s)

In this paper, an experimental load-pull characterization of microwave transistors operated under N-tone-excitations (2⩽N⩽32) is presented. Such characterization is very useful to investigate the linearity of high-power amplifiers via intermodulation distortion analysis. All the measurements were carried out using a newly developed multiline measurement system which uses an arbitrary waveform generator (AWG) to generate the spectrum of any N desired tones and a microwave transition analyzer (MTA) as a vector receiver. The measured intermodulation rejection (IMR) behavior, as the number of tones increases, is compared with previously published theoretical results. Constant output power contours and IMR contours in the ΓL (f0) plane for different number of tones are presented and discussed. The dependency of the IMR on the biasing conditions and the carriers' phase distribution is also investigated

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:45 ,  Issue: 7 )