Very high-frequency small-signal equivalent circuit for short gate-length InP HEMTs

A small-signal equivalent circuit for short gate-length InP high electron-mobility transistors (HEMTs) operating at very high frequency (HF) is proposed. First, the extrinsic parameters of the equivalent circuit are determined using a cold HEMT, but without forward gate bias. Then the intrinsic parameters of the equivalent circuit are extracted, including the frequency dependence of some of them. A fast and accurate method based on least-squares regressions is presented to obtain the extrinsic and intrinsic parameters from measured S-parameters. The improved equivalent circuit accurately fits the S-parameters of 0.25-/spl mu/m InP HEMTs over the 500-MHz up to 40-GHz measurement bandwidth, for all gate-to-source and drain-to-source voltages.