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Very high-frequency small-signal equivalent circuit for short gate-length InP HEMTs

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2 Author(s)
Miras, A. ; Lab. de Bagneux, CNET, Bagneux, France ; Legros, E.

A small-signal equivalent circuit for short gate-length InP high electron-mobility transistors (HEMTs) operating at very high frequency (HF) is proposed. First, the extrinsic parameters of the equivalent circuit are determined using a cold HEMT, but without forward gate bias. Then the intrinsic parameters of the equivalent circuit are extracted, including the frequency dependence of some of them. A fast and accurate method based on least-squares regressions is presented to obtain the extrinsic and intrinsic parameters from measured S-parameters. The improved equivalent circuit accurately fits the S-parameters of 0.25-μm InP HEMTs over the 500-MHz up to 40-GHz measurement bandwidth, for all gate-to-source and drain-to-source voltages

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:45 ,  Issue: 7 )