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Fully Passivated AlInN/GaN HEMTs With f_{\rm T}/f_{\rm MAX} of 205/220 GHz

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7 Author(s)
Tirelli, S. ; Millimeter-Wave Electron. Group, ETH Zurich, Zürich, Switzerland ; Marti, D. ; Haifeng Sun ; Alt, A.R.
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We report the fabrication and characterization of 30-nm-gate fully passivated AlInN/GaN high-electron mobility transistors (HEMTs) with cutoff frequencies fT and fMAX simultaneously exceeding 200 GHz at a given bias point. The current gain cutoff frequency does not vary significantly for 2.5 <; VDS <; 10 V, while fMAX reaches a maximum value of fMAX = 230 GHz at VDS = 6 V. This is the first realization of fully passivated AlInN/GaN HEMTs with fT/fMAX ≥ 205 GHz, a performance enabled by the careful shaping of the gate electrode profile and the use of a thin 60-nm SiN encapsulation film.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )

Date of Publication:

Oct. 2011

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