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Investigation of Emission Polarization and Strain in InGaN–GaN Multiple Quantum Wells on Nanorod Epitaxially Lateral Overgrowth Templates

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7 Author(s)
Huei-Min Huang ; Dept. of Photonics, Nat. Chiao Tung Univ., Hsinchu, Taiwan ; Tien-Chang Lu ; Chiao-Yun Chang ; Shih-Chun Ling
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Non-polar (a-plane) InGaN-GaN multiple quantum wells (MQWs) on the GaN nanorod epitaxially lateral overgrowth templates with different nanorod height have been fabricated. The average in-plane strain in the InGaN MQWs has been determined from 2.73 × 10-2 to 2.58 × 10-2 while the nanorod height in templates increases from 0 to 1.7 μm. The polarization ratio of the emission from InGaN MQWs varies from 85 % to 53 % along with the increase of the GaN nanorod height. The reduction of polarization ratio has been attributed to the partial strain relaxation within the epitaxial structures as a result of growth on the GaN nanorod templates and the micro-size air-voids observed in the nanorod templates.

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Lightwave Technology, Journal of  (Volume:29 ,  Issue: 18 )