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A Theoretical Analysis of the Role of Ambipolar Diffusion in Charge-Carrier Transport in a Quasi-Neutral Region Under High Injection

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1 Author(s)
Edmonds, L.D. ; Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

A recent theoretical analysis considered charge collection from an ionization source in a p-n junction silicon diode under steady-state conditions, i.e., carrier liberation is at a quasi-constant rate, and concluded that the quasi-neutral region partitions into distinct sub-regions. A later empirical investigation (via TCAD simulations) found that this partitioning also applies under transient conditions, but a theoretical explanation was not given for the transient problem. The theoretical analysis given here provides that explanation, and also explains why a charge-collection model derived under steady-state conditions gives correct predictions for the transient problem.

Published in:

Nuclear Science, IEEE Transactions on  (Volume:58 ,  Issue: 5 )

Date of Publication:

Oct. 2011

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