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Hollow Waveguides With Low Intrinsic Photoluminescence Fabricated With PECVD Silicon Nitride and Silicon Dioxide Films

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7 Author(s)
Holmes, M.R. ; Electr. Eng. Dept., Brigham Young Univ., Provo, UT, USA ; Shuo Liu ; Keeley, J. ; Jenkins, M.
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A new type of integrated hollow core anti-resonant reflecting optical waveguide (ARROW) with low intrinsic photoluminescence (PL) fabricated with plasma-enhanced chemical vapor deposition (PECVD) silicon nitride (SiN) and silicon dioxide (SiO2) films is demonstrated. The waveguide is fabricated by surrounding the hollow core with alternating layers of SiN and SiO2. The thicknesses and indices of the layers are designed to meet an anti-resonance condition. Compared to earlier ARROW structures made by depositing high-temperature (HT) SiN (250 °C), the PL background decreases by a factor of ~ 10 when low-temperature (LT) SiN (100 °C ) films are used. Therefore, LT SiN ARROWs are attractive platforms for sensitive fluorescence and Raman spectroscopy measurements of biomolecules.

Published in:

Photonics Technology Letters, IEEE  (Volume:23 ,  Issue: 20 )

Date of Publication:

Oct.15, 2011

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