By Topic

Structure and properties of PZT/PT composite thin film on polysilicon electrode

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Wu Xiaoqing ; Electron. Mater. Res. Lab., Xi'an Jiaotong Univ., China ; Yang Yintang ; Liu Qin ; Zhang Liangying
more authors

Micro machining process can be much simplified when PZT thin film is directly deposited on doped polysilicon wafer which is used as bottom electrode in fabrication of micro actuators. However, the formation of perovskite phase for PZT thin film on polysilicon layer is difficult. The deposited thin film is very easy to crack. PT thin film was used as a transition layer between polysilicon wafer and PZT film. Crack-free PZT/PT composite thin film with perovskite structure was obtained by metallo-organic decomposition (MOD) method. By comparing the ferroelectric behaviors and C-V curves of PZT thin film on platinum which is widely used as bottom electrode in the study of ferroelectric thin films, the effects of polysilicon on crystalline structure and properties of the PZT/PT composite thin film were investigated

Published in:

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on  (Volume:2 )

Date of Conference:

18-21 Aug 1996