By Topic

Z-axis differential silicon-on-insulator resonant accelerometer with high sensitivity

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $31
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yanlong Shang ; State Key Lab. of Transducer Technol., Chinese Acad. of Sci., Beijing, China ; Junbo Wang ; Sheng Tu ; Lei Liu
more authors

The design, fabrication and testing of a z-axis micro-machined resonant accelerometer with differential detection fabricated by silicon-on-insulator (SOI) microelectromechanical system technology are reported. The sensor chip was developed by a silicon-direct-bonding SOI wafer (10+2+290++m). Z-axis acceleration is differentially detected by using two H-style vibrating beams through a frequency shift caused by the inertial force acting as bending stress loading. To improve the sensitivity of the accelerometer, an amplifying mechanism formed by vibrating beams, supporting beams and seismic-mass, which are respectively designed with their thickness as 10, 30 and 300 m, is adopted, from which the transformation efficiency between the external acceleration and the bending stress of the vibrating beams would be improved obviously. The electromagnetically excitation and detection is adopted to make the closed-loop control of the sensor easier. Testing results show that the Q-factors of the two vibrating beams are about 400 in the air and the differential sensitivity measured by two H-style resonators can reach to 584 Hz/g.

Published in:

Micro & Nano Letters, IET  (Volume:6 ,  Issue: 7 )