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Write-Once–Read-Many-Times Memory Based on ZnO on p-Si for Long-Time Archival Storage

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6 Author(s)
Jing Qi ; Dept. of Electr. Eng., Univ. of California, Riverside, CA, USA ; Qing Zhang ; Jian Huang ; Jingjian Ren
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Write-once-read-many-times memory cells were fabricated using ZnO thin film on p-Si (111) substrate. The off- and on-state resistance ratio is over 104 and can be well sustained for more than 100 years and perfectly endure reading cycles of 108 . The conducting filaments consisting of oxygen vacancies are responsible for the switching mechanism.

Published in:

Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )