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Silicon-die thermal monitoring using embedded sensor cells unit

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6 Author(s)
Sayde, M. ; Comp Sci. & Eng. Dept., Univ. du Quebec en Outaouais, Outaouais, QC, Canada ; Berriah, O. ; Lakhssassi, A. ; Bougataya, M.
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Thermal monitoring is essential in integrated circuit (IC) and VLSI chip which are a multilayer structure and a stack of different materials. The increase of the internal temperature of the VLSI circuits can conduct to serious thermal and also thermo-mechanical problems. Due to aggressive technology scaling, VLSI integration density as well as power density increases drastically. Thermal phenomena research activities on micro-scale level are essential for SoC and MEMS-based applications. However, various measurement techniques are needed to understand the thermal behavior of VLSI chip. In particular, measurement techniques for surface temperature distributions of large VLSI systems are a highly challenging research topic. This paper presents an algorithm and the experimental result of silicon-die thermal monitoring method using embedded sensor cells unit. Sensor implementation results and analysis are also presented.

Published in:

New Circuits and Systems Conference (NEWCAS), 2011 IEEE 9th International

Date of Conference:

26-29 June 2011