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Ferroelectric PLZT thin films deposited by RF triode magnetron sputtering for spatial light modulators

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5 Author(s)
Tunaboylu, B. ; Dept. of Electr. & Comput. Eng., California Univ., San Diego, La Jolla, CA, USA ; Harvey, P.C. ; Deng, Fei ; Chi Fan
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Lead lanthanum zirconate titanate, PLZT (9/65/35) thin films were deposited on r-plane sapphire and Pt/Si by triode-magnetron sputtering at low temperature and transformed to the perovskite phase by rapid-thermal annealing. To form perovskite phase directly during deposition requires high substrate temperatures which generally cause lead and/or titanium deficiency. At relatively low deposition temperatures, the deposited films tend to consist of both pyrochlore and perovskite phases. A full transformation of pyrochlore to perovskite phase is difficult. With low temperature deposition and rapid-thermal annealing, perovskite PLZT (9/65/35) films with strong (110) orientation were obtained. Their optical and dielectric properties are reported

Published in:

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on  (Volume:2 )

Date of Conference:

18-21 Aug. 1996