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The electronic band structure of hydrogen passivated, square cross-section, uniaxially strained , , and  silicon nanowires (Si NWs) has been calculated using nonlocal empirical pseudopotentials calibrated to yield the correct work function and benchmarked against first-principles calculations. We present results regarding the dependence and direct/indirect nature of the bandgap on wire diameter and uniaxial strain as well as the ballistic conductance and effective mass. As a result of practical interest, we have found that the largest ballistic electron conductance occurs for compressively strained large-diameter  wires while the smallest transport electron effective mass is found for larger-diameter  wires under tensile stress.