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Empirical pseudopotential calculations of the band structure and ballistic conductance of strained [001], [110], and [111] silicon nanowires

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2 Author(s)
Jiseok Kim ; Department of Electrical and Computer Engineering, University of Massachusetts, Amherst, Massachusetts 01003, USA ; Fischetti, M.V.

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The electronic band structure of hydrogen passivated, square cross-section, uniaxially strained [001], [110], and [111] silicon nanowires (Si NWs) has been calculated using nonlocal empirical pseudopotentials calibrated to yield the correct work function and benchmarked against first-principles calculations. We present results regarding the dependence and direct/indirect nature of the bandgap on wire diameter and uniaxial strain as well as the ballistic conductance and effective mass. As a result of practical interest, we have found that the largest ballistic electron conductance occurs for compressively strained large-diameter [001] wires while the smallest transport electron effective mass is found for larger-diameter [110] wires under tensile stress.

Published in:

Journal of Applied Physics  (Volume:110 ,  Issue: 3 )