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Preparation and characterization of sol-gel derived Bi4Ti3O12 thin films

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5 Author(s)
Bukowski, T.J. ; Dept. of Mater. Sci. & Eng., Arizona Univ., Tucson, AZ, USA ; Alexander, T.P. ; Uhlmann, D.R. ; Teowee, G.
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Sol-gel derived Bi4Ti3O12 thin films have been prepared on platinized Si wafers and fired to temperatures ranging from 550°C to 700°C. Excess Bi was incorporated in the precursor solutions to determine its effects on dielectric and ferroelectric properties. Multiple spincoating with an intermediate firing of 400°C between coatings was performed to obtain films up to 0.5 μm thick. Single phase Bi4Ti3 O12 films were obtained when fired at 600°C which exhibited a dielectric constant of 225

Published in:

Applications of Ferroelectrics, 1996. ISAF '96., Proceedings of the Tenth IEEE International Symposium on  (Volume:2 )

Date of Conference:

18-21 Aug 1996

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