Scheduled System Maintenance on May 29th, 2015:
IEEE Xplore will be upgraded between 11:00 AM and 10:00 PM EDT. During this time there may be intermittent impact on performance. For technical support, please contact us at We apologize for any inconvenience.
By Topic

An Analytical Model of the Switching Behavior of 4H-SiC p ^{bm +} -n-n ^{bm +} Diodes from Arbitrary Injection Conditions

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Bellone, S. ; DIEII, Univ. degli Studi di Salerno, Salerno, Italy ; Della Corte, F.G. ; Di Benedetto, L. ; Licciardo, G.D.

An analytical model of the switching behavior of SiC diodes is presented. The model gives an accurate description of the current and voltage transient for a wide range of reverse to forward current ratios and allows one to evaluate the spatial-temporal distributions of carriers density, current components and electric field along the base at a generic instant of the whole transient. Using this model, a large-signal circuit is derived that is useful for circuital analysis of diode under generic operation conditions. The accuracy of the model is verified by comparisons with numerical simulations and experimental results.

Published in:

Power Electronics, IEEE Transactions on  (Volume:27 ,  Issue: 3 )