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Highly stable amorphous In-Ga-Zn-O thin-film transistors produced by eliminating deep subgap defects

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3 Author(s)
Nomura, K. ; Frontier Research Center, Tokyo Institute of Technology, Mail Box S2-13, 4259 Nagatsuta, Midori-ku, Yokohama 226-8503, Japan ; Kamiya, Toshio ; Hosono, Hideo

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Highly stable amorphous-In-Ga-Zn-O (a-IGZO) thin film transistors (TFTs) against constant current stress and negative bias light illumination stress were realized by forming a Y2O3 passivation layer. A recent photoemission study revealed that deep defects located above the valence band top are formed at a high density to a depth of ∼2 nm in the surface layer of the a-IGZO channel. Here, we present that these deep defects are responsible for the instability of a-IGZO TFTs, and the instability can be much improved by passivation with Y2O3, which effectively eliminates the deep subgap defects from the surface of a-IGZO.

Published in:

Applied Physics Letters  (Volume:99 ,  Issue: 5 )