By Topic

High sensitivity and low power skin sensor implementation and performance comparison using CMOS and CNFET

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

4 Author(s)
Ho Joon Lee ; Dept. of Electr. Eng., Illinois Inst. of Technol., Chicago, IL, USA ; Nan, Haiqing ; Kyung Ki Kim ; Ken Choi

Skin sensor is the most critical part for controlling robot sensing behavior. In this paper, we provide circuit implementation and simulation for sensing the pressure in the skin sensor using CMOS and CNFET at 32nm technology node. The proposed scheme can be used as an active matrix like memory element in the skin sensor and it is demonstrated by showing the output image according to the skin sensor's pressure location using Matlab implementation. The circuits are compared with CMOS and CNFET (Carbon Nanotube FET) at different supply voltages to show the feasibility of the scheme. Also, low-leakage circuit technique is applied to the proposed sensing circuit.

Published in:

Electro/Information Technology (EIT), 2011 IEEE International Conference on

Date of Conference:

15-17 May 2011