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Lasing operation of long-wavelength transistor laser using AGaInAs/InP quantum well active region

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6 Author(s)
Shirao, M. ; Dept. of Electr. & Electron. Eng., Tokyo Inst. of Technol., Tokyo, Japan ; Sato, T. ; Takino, Y. ; Sato, N.
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A room-temperature continuous-wave operation of a 1.3 μm wavelength transistor laser (TL) with p/n/p configuration was achieved using AlGaInAs/InP 5 quantum-well active region A threshold current (emitter current) of 17 mA was obtained for a stripe width of 1.8 μm and a cavity length of 500 μm, and it was controlled by the collector-base voltage. Even though the current gain was only 0.01, three terminal operation was demonstrated and it can be improved by introducing n/p/n-TLs.

Published in:

Compound Semiconductor Week (CSW/IPRM), 2011 and 23rd International Conference on Indium Phosphide and Related Materials

Date of Conference:

22-26 May 2011