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Low Reset Current in Stacked \hbox {AlO}_{x}/ \hbox {WO}_{x} Resistive Switching Memory

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7 Author(s)
Song, Y.L. ; Dept. of Microelectron., Fudan Univ., Shanghai, China ; Liu, Y. ; Wang, Y.L. ; Wang, M.
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The complex impedance spectroscopy method associated with capacitance-voltage is employed to investigate the resistive switching behavior of the bilayer structure for the first time. The reset current is reduced by more than one order for the AlOx/WOx bilayer compared with that of the single-layer structure. It is distinguished that each layer plays an important role. The AlOx layer is the dominating switching layer, while the WOx layer has the functions of controlling the conductive filaments in the AlOx layer and acting as a series impedance to reduce the reset current.

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Electron Device Letters, IEEE  (Volume:32 ,  Issue: 10 )